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Volumn 517, Issue 14, 2009, Pages 4161-4164

Effects of surface treatments using PECVD-grown hexamethyldisiloxane on the performance of organic thin-film transistor

(8) Moon, Mi Ran a Nam, Eunkyoung a Woo, Jihyung a Lee, Sungwoo a Park, Kyung b Jung, Donggeun a Kim, Hyoungsub b Lee, Hoo Jeong b

a Institute for Basic Science (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

Hexamethyldisiloxane; Pentacene; Plasma enhanced chemical vapor deposition

Indexed keywords

DIELECTRIC SURFACES; ELECTRICAL MOBILITIES; GRAIN SIZES; HEXAMETHYLDISILOXANE; ORGANIC THIN-FILM TRANSISTORS; PENTACENE; PENTACENE FILMS; PROCESS OPTIMIZATIONS; RF POWER; ROOM TEMPERATURES; TRANSISTOR CHARACTERISTICS;

GATE DIELECTRICS; GATES (TRANSISTOR); PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE TREATMENT; THIN FILM TRANSISTORS; VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 65449174212 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.02.048 Document Type: Article

Times cited : (7)

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