ZnO-GaN hybrid heterostructures as potential cost-efficient LED technology

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1281-1287

  Bakin, Andrey ^a   Behrends, Arne ^a   Waag, Andreas ^a   Lugauer, Hans Jürgen ^b   Laubsch, Ansgar ^b   Streubel, Klaus ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Chemical growth; Hybrid; Light emitting devices; Metal organic chemical vapor deposition (MOCVD); Nitrides; Oxides; Structures; ZnO

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; STRUCTURE (COMPOSITION); WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); CHEMICAL GROWTH; COST-EFFICIENT; EXTERNAL QUANTUM EFFICIENCY; HYBRID; LIGHT EMITTING DEVICES; P TYPE CONDUCTIVITY; POTENTIAL BENEFITS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 77953672139     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2037444     Document Type: Conference Paper

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