High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 582-584

  Kim, Hyunsoo ^a   Lee, Sung Nam ^a   Park, Yongjo ^a   Seong, Tae Yeon ^b  

^a Samsung Electro Mechanics   (South Korea)

^b Korea University   (South Korea)

Author keywords

Electrode; GaN; Light emitting diode (LED)

Indexed keywords

CONTACT RESISTANCE; LIGHT REFLECTION; MIRRORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

CURRENT INJECTION; LIGHT REFLECTIVITY; METALLIC HYBRID REFLECTORS;

LIGHT EMITTING DIODES;

EID: 44849089269     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.921392     Document Type: Article

References (13)

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