Electric-field-induced multistep resistance switching in planar VO 2/c-Al2O3 structure

Japanese Journal of Applied Physics

Volumn 48, Issue 6, 2009, Pages

  Okimura, Kunio ^a   Ezreena, Nurul ^a   Sasakawa, Yusuke ^a   Sakai, Joe ^b  

^a TOKAI UNIVERSITY   (Japan)

^b UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT PATHS; ELECTRIC-FIELD; ELECTRIC-FIELD-INDUCED RESISTANCE; ELECTRONIC DEVICE; FUNDAMENTAL RESEARCH; MULTI-STEP; OPTICAL MICROSCOPES; OXIDE MATERIALS; PLANAR DEVICES; RESISTANCE SWITCHING; SINGLE-STEP; SWITCHING MECHANISM; TERMINAL ELECTRODES; TRANSITION TEMPERATURE; VANADIUM DIOXIDE;

ELECTRIC RESISTANCE; ELECTRON DEVICES; TERMINALS (ELECTRIC); VANADIUM; VANADIUM COMPOUNDS; X RAY DIFFRACTION;

SWITCHING;

EID: 68649127946     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.065003     Document Type: Article

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