Light emission from Al/HfO2/silicon diodes

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6486-6488

  Chen, T C ^a   Lai, W Z ^a   Liang, C Y ^a   Chen, M J ^b   Lee, L S ^c   Liu, C W ^a,c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b ACADEMIA SINICA   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; HAFNIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOS DEVICES; PERMITTIVITY; PHONONS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON-HOLE PLASMA EMISSION; METAL-INSULATOR-SILICON LIGHT-EMITTING DIODE (MIS LED); RADIATIVE RECOMBINATION; RAPID THERMAL OXIDATION (RTO);

TUNNEL DIODES;

EID: 2942662073     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695604     Document Type: Article

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