SCOPUS 정보 검색 플랫폼

Volumn 157, Issue 7, 2010, Pages

Concentration-dependent wet etching behaviors of ga-doped zno films sputter-deposited at room temperature using formic and citric acids

(4) Lee, Dong Kyoon a Kwon, Ji Hye a Lim, Young Soo b Yang, Heesun a

a Hong Ik University (South Korea)

b Korea Institute of Ceramic Engineering and Technology (KICET) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; CONCENTRATION OF; CONCENTRATION-DEPENDENT; ETCHING BEHAVIOR; ETCHING CONDITION; GA-DOPED; GA-DOPED ZNO; GLASS SUBSTRATES; RATE LIMITING; ROOM TEMPERATURE; VERTICAL ETCHING; WEAK ORGANIC ACIDS;

ACTIVATION ENERGY; CITRIC ACID; CONCENTRATION (PROCESS); CONDUCTIVE FILMS; ETHYLENE; GALLIUM; GALLIUM ALLOYS; GLASS; ORGANIC ACIDS; OXIDE FILMS; POLYETHYLENE TEREPHTHALATES; SUBSTRATES; ZINC; ZINC OXIDE;

WET ETCHING;

EID: 77953163182 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3429217 Document Type: Article

Times cited : (1)

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