Simulation of diffusion-controlled etching

Modelling and Simulation in Materials Science and Engineering

Volumn 15, Issue 5, 2007, Pages 441-449

  Chahoud, M ^a  

^a DEPARTMENT OF MOLECULAR BIOLOGY AND BIOTECHNOLOGY   (Syrian Arab Republic)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ETCHING; MASKS;

ETCHING SOLUTION; PERIODICALLY MASKED SUBSTRATES; SUBSTRATE SURFACE; SURFACE CONCENTRATION;

SUBSTRATES;

EID: 34547456513     PISSN: 09650393     EISSN: 1361651X     Source Type: Journal    
DOI: 10.1088/0965-0393/15/5/005     Document Type: Article

References (10)

1. Bean K E 1978 Anisotropic etching of silicon IEEE Trans. Electron Devices 25 1185-93
2. Peterson K E 1982 Silicon as a mechanical material Proc. IEEE 70 420-57
3. Kim Y S, Kim J, Choe J S, Rob Y G, Jeon H and Woo J C 2000 Semiconductor microlenses fabricated by one-step wet etching IEEE Photon. Technol. Lett. 12 507-9
4. Cho S R, Kim J, Oh K S, Yang S K, Baek J M, Yang D H, Kim T I and Jeon H 2002 Enhanced optical coupling performance in an InGaAs photodiode integrated with wet etched microlens IEEE Photon. Technol. Lett. 14 378-80
5. Kuiken H K, Kelly J J and Notten P H L 1986 Etching profiles at resist edges: I Mathematical models for diffusion-controlled cases J. Electrochem. Soc. 133 1217-26
6. Vuik C and Cuvelier C 1985 Numerical solution of an etching problem J. Comput. Phys. 59 247-63
7. Fujinaga M, Kotani N, Kunikiyo T, Oda H, Shirahata M and Akasaka Y 1990 Three-dimensional topography simulation model: etching and lithography IEEE Trans. Electron Devices 37 2183-92
8. Fujii T and Ekawa M 1995 Origin of compositional modulation of InGaAs in selective area metalorganic vapor phase epitaxy J. Appl. Phys. 78 5373-86
9. Wllner D, Chahoud M, Schrimpf T, Bònsch P, Wehmann H-H and Schlachetzki A 1999 Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates J. Appl. Phys. 85 249-55
10. Notten P H L, Kelly J J and Kuiken H K 1986 Etching profiles at resist edges: II. Experimental confirmation of models using GaAs J. Electrochem. Soc. 133 1226-32