Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Sato, M ^a   Umezawa, N ^b   Shimokawa, J ^a   Arimura, H ^c   Sugino, S ^d   Tachibana, A ^d   Nakamura, M ^a   Mise, N ^a   Kamiyama, S ^a   Morooka, T ^a   Eimori, T ^a   Shiraishi, K ^e   Yamabe, K ^e   Watanabe, H ^c   KYamada, ^f   Aoyama, T ^a   Nabatame, T ^a   Nara, Y ^a   Ohji, Y ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d KYOTO UNIVERSITY   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

^f WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY LEVELS; HFSION GATE DIELECTRICS; IONICITY; N-MOSFETS; PHYSICAL MODELS; POSITIVE STRESS; PRE-EXISTING AND STRESS-INDUCED DEFECTS; STRESS INDUCED DEFECTS; STRESS VOLTAGES; VACANCY-RELATED DEFECTS;

DEFECTS; ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LANTHANUM; MOS CAPACITORS; OXYGEN;

OXYGEN VACANCIES;

EID: 64549090184     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796629     Document Type: Conference Paper

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