Distributed Bragg reflector enhancement of electroluminescence from a silicon nanocrystal light emitting device

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4394-4398

  Creazzo, Tim ^a   Redding, Brandon ^a   Marchena, Elton ^a   Hao, Ruiying ^a   Murakowski, Janusz ^a   Shi, Shouyuan ^a   Prather, Dennis W ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

Distributed Bragg reflector; Electroluminescence; Photoluminescence; Resonant cavity; Si SiO2 superlattices; Silicon nanocrystals

Indexed keywords

ALTERNATING LAYERS; CONTACT LAYERS; DBR; ENHANCED ELECTROLUMINESCENCES; INTRINSIC LAYER; LIGHT EMITTING DEVICES; OPTICAL OUTPUT POWER; POWER CONVERSION EFFICIENCIES; REFERENCE DEVICES; RESONANT CAVITY; SILICON DIOXIDE; SILICON NANOCRYSTALS;

CAVITY RESONATORS; CONVERSION EFFICIENCY; DISTRIBUTED BRAGG REFLECTORS; LIGHT; LIGHT EMISSION; NANOCRYSTALS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION; SILICA; SUPERLATTICES;

ELECTROLUMINESCENCE;

EID: 77953135730     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.02.023     Document Type: Article

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