Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 704-708

  Wu, Chun Yu ^a   Liao, Ta Chuan ^a   Yu, Ming H ^a   Chen, Sheng Kai ^a   Tsai, Chung Min ^b   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED FLASH; FIELD ENHANCEMENT; GATE STRUCTURE; LOCAL ELECTRIC FIELD; MEMORY PERFORMANCE; MEMORY WINDOW; NONVOLATILE MEMORY DEVICES; ON-CURRENTS; POLY-SI; POLY-SI TFTS; PROGRAM/ERASE; SHARP CORNERS; SIDEWALL SPACER; SILICON OXIDE NITRIDE OXIDE SILICONS; SONOS MEMORY; SUBTHRESHOLD SWING; SYSTEM ON PANEL; TRANSISTOR PERFORMANCE; TUNNELING OXIDES;

ELECTRIC FIELDS; NITRIDES; NONVOLATILE STORAGE; POLYSILICON; SILICON OXIDES;

FLASH MEMORY;

EID: 77953134117     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.016     Document Type: Article

References (12)

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