Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 921-924

  Lombardo, S ^a   Gerardi, C ^b   Breuil, L ^c   Jahan, C ^d   Perniola, L ^d   Cina, G ^b   Corso, D ^a   Tripiciano, E ^b   Ancarani, V ^b   Iannaccone, G ^e   Iacono, G ^b   Bongiorno, C ^a   Razafindramora, J ^d   Garozzo, C ^a   Barbera, P ^a   Nowak, E ^d   Puglisi, R ^a   Costa, G A ^b   Coccorese, C ^b   Vecchio, M ^b   Rimini, E ^a   Van Houdt, J ^c   De Salvo, B ^d   Melanotte, M ^b   more..

^a CNR IMM   (Italy)

^b STMICROELECTRONICS   (Italy)

^c IMEC   (Belgium)

^d CEA LETI   (France)

^e UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; NITRIDES; SEMICONDUCTOR STORAGE; SILICON;

DOUBLE GATES; FEATURE SIZES; NANOCRYSTAL MEMORY DEVICES; SI-NANOCRYSTALS; TRI-GATE;

DATA STORAGE EQUIPMENT;

EID: 50249092696     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419102     Document Type: Conference Paper

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