The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

Materials Science in Semiconductor Processing

Volumn 13, Issue 1, 2010, Pages 34-40

  Yildiz, D E ^a   Altindal, Ş ^b   Tekeli, Z ^b   Ozer M ^b  

^a HITIT UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

Au SnO2 n Si and Al SnO2 p Si SBDs; I V T characteristics; Insulator layer; Series resistance; Surface states

Indexed keywords

BARRIER HEIGHTS; BIAS DEPENDENCE; ELECTRICAL PARAMETER; ENERGY DENSITY DISTRIBUTIONS; FORWARD BIAS; IDEALITY FACTORS; INSULATOR LAYER; INTERFACIAL INSULATOR LAYER; IV CHARACTERISTICS; METAL/SEMICONDUCTOR INTERFACE; P-TYPE; PARTICULAR DISTRIBUTION; REVERSE BIAS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SERIES RESISTANCES; SURFACE STATE; TEMPERATURE DEPENDENCE; V-T CHARACTERISTICS; ZERO-BIAS;

SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; SURFACE RESISTANCE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77953130586     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2010.02.004     Document Type: Article

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