Characteristics of zirconium oxide gate ion-sensitive field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 7 A, 2007, Pages 4333-4337

  Chang, Kow Ming ^a   Chao, Kuo Yi ^a   Chou, Ting Wei ^a   Chang, Chin Tien ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Drift; ISFET; MOSFET; PH; Sensitivity; ZrO2

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; ION SELECTIVE MEMBRANES; OXIDE FILMS; ZIRCONIUM COMPOUNDS;

DIRECT CURRENT (DC) SPUTTERING; ION-SENSITIVE FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 34547842184     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.4333     Document Type: Article

References (12)

1. P. Bergveld: IEEE Trans. Biomed. Eng. 17 (1970) 70.
2. S. D. Moss, C. C. Johnson, and J. Janata: IEEE Trans. Biomed. Eng. 25 (1978) 49.
3. H. K. Liao, J. C. Chou, W. Y. Chung, T. Ping, and S. K. Hsiung: Sens. Actuators B 50 (1998) 104.
4. L. T. Yin, J. C. Chou, W. Y. Chung, T. Ping, and S. K. Hsiung: Mater. Chem. Phys. 70 (2001) 12.
5. P. Gimmel, B. Gompf, D. Schmeiosser, H. D. Weimhofer, W. Gopel, and M. Klein: Sens. Actuators 17 (1989) 195.
6. J. C. Chou: Sens. Actuators B 66 (2000) 106.
7. T. Matsuo and M. Esashi: Sens. Actuators 1 (1981) 77.
8. J. C. Chou and J. L. Chiang: Sens. Actuators B 62 (2000) 81.
9. T. Akiyama, Y. Ujihira, Y. Okabe, T. Sugano, and E. Niki: IEEE Trans. Electron Devices 29 (1982) 1936.
10. P. Bergveld: Sens. Actuators B 88 (2003) 1.
11. D. E. Yates, S. Levine, and T. W. Healy: J. Chem. Soc., Faraday Trans. I 70 (1974) 1807.
12. W. M. Siu and R. S. C. Cobbold: IEEE Trans. Electron Devices 26 (1979) 1805.