Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-CuxO and HfO2/SiO2 high-κ stack gate dielectrics

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4446-4449

  Zou, Xiao ^a,b   Fang, Guojia ^a   Yuan, Longyan ^a   Liu, Nishuang ^a   Long, Hao ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b JIANGHAN UNIVERSITY   (China)

Author keywords

Annealing; Copper oxide; Hafmium dioxide; Metal oxide semiconductor capacitor; Pulsed laser deposition; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

CRYSTALLINE STRUCTURE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; GATE LEAKAGE CURRENT DENSITY; GATE LEAKAGES; HAFMIUM DIOXIDE; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; P-TYPE; POLYCRYSTALLINE; SI SUBSTRATES; STACK GATE DIELECTRICS; TRANSMISSION ELECTRON MICROSCOPE;

ANNEALING; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRONS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METAL ANALYSIS; METALS; MOS CAPACITORS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77953127214     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.02.015     Document Type: Article

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