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Microelectronics Journal

Volumn 33, Issue 7, 2002, Pages 583-588

Built-in electric fields in InAs quantum dots grown on (N11) GaAs substrates

(3) Sanguinetti, S a Gurioli, M a,b Henini, M c

a Istituto Nazionale per la Fisica della Materia Milan (Italy)

b UNIVERSITY OF FLORENCE (Italy)

c UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

Electric field; GaAs substrates; Optical properties

Indexed keywords

ELECTRIC FIELDS; OPTICAL PROPERTIES; PIEZOELECTRICITY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER KINETICS; CARRIER PHOTOINJECTION; OPTICAL TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036642064 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(02)00023-X Document Type: Conference Paper

Times cited : (9)

References (15)

1
- 0005801111
- (1999) J. Appl. Phys. , vol.85 , pp. 2221
- Bruno, J.D.¹ Tobler, R.L.²

2
- 0000263549
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1982
- Sanguinetti, S.¹ Gurioli, M.² Grilli, E.³ Guzzi, M.⁴ Henini, M.⁵

3
- 0000255473
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2979
- Patané, A.¹ Levin, P.² Polimeni, A.³ Schindler, F.⁴ Main, P.C.⁵ Eaves, L.⁶ Henini, M.⁷

4
- 0001259976
- (2001) Appl. Phys. Lett. , vol.78 , pp. 931
- Gurioli, M.¹ Sanguinetti, S.² Henini, M.³

5
- 0032473759
- (1998) J. Cryst. Growth , vol.187 , pp. 126
- Fortina, S.¹ Sanguinetti, S.² Grilli, E.³ Guzzi, M.⁴ Henini, M.⁵ Polimeni, A.⁶ Eaves, L.⁷

6
- 0000698212
- (1997) Microelectron. J. , vol.28 , pp. 933
- Henini, M.¹ Sanguinetti, S.² Brusaferri, L.³ Grilli, E.⁴ Guzzi, M.⁵ Upward, M.⁶ Moriarty, P.⁷ Beton, P.⁸

7
- 0033517202
- (1999) Europhys. Lett. , vol.47 , pp. 701
- Sanguinetti, S.¹ Chiantoni, G.² Grilli, E.³ Guzzi, M.⁴ Henini, M.⁵ Polimeni, A.⁶ Patané, A.⁷ Eaves, L.⁸ Main, P.C.⁹

8
- 0029256445
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 1362
- Vaccaro, P.¹ Tominaga, K.² Hosoda, M.³ Fujita, K.⁴ Watanabe, T.⁵

9
- 36549098102
- (1988) J. Appl. Phys. , vol.63 , pp. 2717
- Smith, D.L.¹ Mailhiot, C.²

10
- 0005376348
- (1998) Phys. Rev. B , vol.58
- Widmann, F.¹ Simon, J.² Daudin, B.³ Feuillet, G.⁴ Rouviere, J.L.⁵ Pelekanos, N.T.⁶ Fishman, G.⁷

11
- 0001420731
- (2000) Phys. Rev. Lett. , vol.84 , pp. 733
- Fry, P.W.¹ Itskevich, I.E.² Mowbray, D.J.³ Skolnick, M.S.⁴ Finley, J.J.⁵ Barker, J.A.⁶ O'Reilly, E.P.⁷ Wilson, L.R.⁸ Larkin, I.A.⁹ Maksyn, P.A.¹⁰ Hopkinson, M.¹¹ Al-Khafaji, M.¹² David, J.P.R.¹³ Cullis, A.G.¹⁴ Hill, G.¹⁵ Clark, J.C.¹⁶

12
- 0003781076
- Clarendon, Oxford
- (1964) Physical Properties of Crystals
- Nye, J.¹

13
- 0001369555
- (1993) Phys. Rev. B , vol.48 , pp. 2298
- DeCaro, L.¹ Tapfer, L.²

14
- 4244157969
- (1995) Phys. Rev. B , vol.51 , pp. 4374
- DeCaro, L.¹ Tapfer, L.²

15
- 0003769722
- INSPEC, Stevenage, UK
- (1993) Properties of Lattice-Matched and Strained Indium Gallium Arsenide
- Bhattacharya, P.¹

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