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Volumn 2, Issue 12, 2007, Pages 609-613

Influence of GaAs substrate orientation on InAs quantum dots: Surface morphology, critical thickness, and optical properties

(5) Liang, B L a Wang, Zh M a Sablon, K A a Mazur, Yu I a Salamo, G J a

a UNIVERSITY OF ARKANSAS (United States)

Author keywords

InAs quantum dots; Molecular beam epitaxy; Photoluminescence; Vicinal surface

Indexed keywords

MISORIENTATION ANGLE; TIME RESOLVED PHOTOLUMINESCENCE; VICINAL SURFACE;

INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN RELAXATION; SURFACE MORPHOLOGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 36549082459 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-007-9103-3 Document Type: Article

Times cited : (21)

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