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Volumn 28, Issue 8-10, 1997, Pages 933-938

Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces

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EID: 0000698212     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00132-2     Document Type: Article
Times cited : (48)

References (11)
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    • Theory of the linear and nonlinear optical properties of semiconductor microcrystallites
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  • 3
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    • Excitonic optical nonlinearity and exciton dynamics on semiconductor quantum dots
    • Takagahara, T., Excitonic optical nonlinearity and exciton dynamics on semiconductor quantum dots, Phys. Rev., B36 (1987) 9293.
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    • Takagahara, T.1
  • 5
    • 0028494161 scopus 로고
    • Photoluminescence of single InAs quantum dots obtained by self-organized growth of GaAs
    • Marzin, J.Y., Gerard, J.M., Izrael, A., Barrier, D. and Bastard, G., Photoluminescence of single InAs quantum dots obtained by self-organized growth of GaAs, Phys. Rev. Lett., 73 (1994) 716.
    • (1994) Phys. Rev. Lett. , vol.73 , pp. 716
    • Marzin, J.Y.1    Gerard, J.M.2    Izrael, A.3    Barrier, D.4    Bastard, G.5
  • 6
    • 0348043711 scopus 로고
    • Critical layer thickness for self-assembled InAs islands on GaAs
    • Leonard, D., Pond, K., and Petroff, P.M., Critical layer thickness for self-assembled InAs islands on GaAs, Phys. Rev., B50 (1994) 11687.
    • (1994) Phys. Rev. , vol.B50 , pp. 11687
    • Leonard, D.1    Pond, K.2    Petroff, P.M.3
  • 8
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    • Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30 nm diameter) self organized on GaAs (311)B substrates
    • Nötzel, R., Temmyo, J., Kamada, H., Furuta, T. and Tamamura, T., Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30 nm diameter) self organized on GaAs (311)B substrates, Appl. Phys. Lett., 65 (1994) 4579.
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 4579
    • Nötzel, R.1    Temmyo, J.2    Kamada, H.3    Furuta, T.4    Tamamura, T.5
  • 10
    • 0001255556 scopus 로고
    • Reconstruction of GaAs(-1-1-1) surfaces observed by scanning tunneling microscopy
    • Biegelsen, D.K., Bringans, R.D., Northrup, J.E. and Swartz, L.-E., Reconstruction of GaAs(-1-1-1) surfaces observed by scanning tunneling microscopy, Phys. Rev. Lett., 65 (1990) 452.
    • (1990) Phys. Rev. Lett. , vol.65 , pp. 452
    • Biegelsen, D.K.1    Bringans, R.D.2    Northrup, J.E.3    Swartz, L.-E.4
  • 11
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    • Atomic step organization in homoepitaxy growth on GaAs (111)B substrates
    • Schowalter, L.J., Yang, K. and Thundat, T., Atomic step organization in homoepitaxy growth on GaAs (111)B substrates, J. Vac. Sci. Technol., B12 (1994) 2579.
    • (1994) J. Vac. Sci. Technol. , vol.B12 , pp. 2579
    • Schowalter, L.J.1    Yang, K.2    Thundat, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.