High performance quantum well intermixed superluminescent diodes

Measurement Science and Technology

Volumn 15, Issue 8, 2004, Pages 1591-1595

  Ong, Teik Kooi ^a   Yin, Ming ^a   Yu, Zheng ^a   Chan, Yuen Chuen ^a   Lam, Yee Loy ^a  

^a DenseLight Semiconductors Pte Ltd   (Singapore)

Author keywords

Bandgap energy; Coherence spectrum; InGaAs InGaAsP; Ion implantation; Quantum well intermixing; Superluminescent diode

Indexed keywords

DIODES; ION IMPLANTATION; OPTICAL FIBERS; SPECTRUM ANALYSIS; THERMAL DIFFUSION;

BANDGAP ENERGY; INTERMIXING TECHNIQUES; MASK THICKNESS; SUPERLUMINESCENT DIODES;

SEMICONDUCTOR QUANTUM WELLS;

SENSOR;

EID: 4043174226     PISSN: 09570233     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-0233/15/8/028     Document Type: Article

References (13)

1. Burns W K, Chen C L and Moeller R P 1983 Fiber-optic gyroscopes with broad-band sources J. Lightwave Technol. LT-1 98-105
2. Sampson D D and Holloway W T 1994 100 mW spectrally-uniform broadband ASE some for spectrum-sliced WDM systems Electron Lett. 30 1611-2
3. Schmitt J M 1999 Optical coherence tomography (OCT): a review IEEE J. Sel. Top. Quantum Electron. 5 1205-15
4. Alphonse G A, Gilbert D B, Harvey M G and Ettenberg M 1988 High-power superluminescent diodes IEEE J. Quantum Electron QE-24 2454-7
5. Lin C F and Juang C S 1996 Superluminescent diodes with bent waveguide IEEE Photon. Technol. Lett. 8 206-8
6. Wang C S, Cheng W H, Hwang C J, Burns W K and Moeller R P 1982 High power low-divergence superradiance diode Appl. Phys. Lett. 41 587-9
7. Song J H, Cho S H, Han I K, Hu Y, Heim P J S, Johnson F G, Stone D R and Dagenais M 2000 High-power broad-band superluminescent diode with low spectral modulation at 1.5-μm wavelength IEEE Photon Technol. Lett. 12 783-5
8. Wu B R, Lin C F, Laih L W and Shih T T 2000 Extremely broadband InGaAsP/InP super-luminescent diodes Electron. Lett. 36 2093-5
9. Mikami O, Yasaka H and Noguchi Y 1990 Broader spectral width InGaAsP stacked active layer superluminescent diodes Appl. Phys. Lett. 56 987-9
10. Ong T K, Chan Y C, Lam Y L and Ooi B S 2001 Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering Appl. Phys. Lett. 78 2637-9
11. Thornton R L, Mosby W J and Paoli T L 1988 Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disordering J. Lightwave Technol. 66 786-92
12. Poole P J, Davies M, Dion M, Feng Y, Charbonneau S, Goldberg R D and Mithell I V 1996 The fabrication of a broad-spectrum light-emitting diode using high-enegry ion implantation IEEE Photon. Technol. Lett. 8 1145-7
13. McDougall S D, Kowalski O P, Marsh J H and Aitchison J S 1999 Broad optical bandwidth InGaAs-InAIGaAs light-emitting diodes fabricated using a laser annealing process IEEE Photon. Technol. Lett. 11 1557-9