Fabrication of 5-GHz-band SAW filter with atomically-flat-surface AlN on sapphire

Proceedings - IEEE Ultrasonics Symposium

Volumn 1, Issue , 2004, Pages 203-206

  Uehara, K ^a   Yang, C M ^a   Shibata, T ^b   Kim, S K ^a   Kameda, S ^a   Nakase, H ^a   Tsubouchi, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AUTOMATION; ELECTRON BEAMS; EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; LITHOGRAPHY; MOBILE TELECOMMUNICATION SYSTEMS; SAPPHIRE; WAVE PROPAGATION;

INSERTION LOSS; LIFT-OFF METHOD; PROPAGATION LOSS; TEMPERATURE-COEFFICIENT OF DELAY (TCD);

ACOUSTIC SURFACE WAVE FILTERS;

EID: 21644484798     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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