An investigation of the magnetic state dependent low frequency noise in magnetic tunnel junctions

Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

  Guo, Feng ^a   McKusky, Greg ^a   Dahlberg, E Dan ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; APPLIED MAGNETIC FIELDS; LOW-FREQUENCY NOISE; MAGNETIC AFTER-EFFECT; MAGNETIC STATE; MAGNETIC TUNNEL JUNCTION;

MAGNETIC DEVICES; MAGNETIC FIELDS; SEMICONDUCTOR JUNCTIONS; THERMAL NOISE; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS; WIND TUNNELS;

MAGNETIC MATERIALS;

EID: 69049089853     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3205476     Document Type: Article

References (14)

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12. In this experiment, the time the magnetic field reaches the field of interest is defined as t=0.
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14. In Fig., Barkhausen jumps are observed. These jumps are generally observed in our junctions with the switching of the hard layer. These observed discrete jumps coexist with the logarithmic evolution of time.