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Volumn 96, Issue 19, 2010, Pages

Nanoelectromechanical torsion switch of low operation voltage for nonvolatile memory application

Author keywords

[No Author keywords available]

Indexed keywords

ACID VAPORS; DEVICE LAYERS; FOCUSED ION BEAM MILLING; HIGH DENSITY; NANO-ELECTROMECHANICAL; NON-VOLATILE MEMORY APPLICATION; OPERATION VOLTAGE; PULL-IN VOLTAGE; SILICON CANTILEVER; SILICON DEVICES; SILICON-ON-INSULATOR SUBSTRATES; SIMULATED DATA; TORSION SPRINGS;

EID: 77953001253     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428781     Document Type: Article
Times cited : (36)

References (10)
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  • 3
    • 0034617249 scopus 로고    scopus 로고
    • Carbon nanotube-based nonvolatile random access memory for molecular computing
    • DOI 10.1126/science.289.5476.94
    • T. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C. L. Cheung, and C. Lieber, Science SCIEAS 0036-8075 289, 94 (2000). 10.1126/science.289.5476.94 (Pubitemid 30463297)
    • (2000) Science , vol.289 , Issue.5476 , pp. 94-97
    • Rueckes, T.1    Kim, K.2    Joselevich, E.3    Tseng, G.Y.4    Cheung, C.-L.5    Lieber, C.M.6
  • 6
    • 33744780204 scopus 로고    scopus 로고
    • Electromechanical carbon nanotube switches for high-frequency applications
    • DOI 10.1021/nl052552r
    • A. B. Kaul, E. W. Wong, L. Epp, and B. D. Hunt, Nano Lett. NALEFD 1530-6984 6, 942 (2006). 10.1021/nl052552r (Pubitemid 43836608)
    • (2006) Nano Letters , vol.6 , Issue.5 , pp. 942-947
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  • 7
    • 70349922943 scopus 로고    scopus 로고
    • APPLAB 0003-6951. 10.1063/1.3243695
    • K. -T. Lam, C. Lee, and G. Liang, Appl. Phys. Lett. APPLAB 0003-6951 95, 143107 (2009). 10.1063/1.3243695
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 143107
    • Lam, K.-T.1    Lee, C.2    Liang, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.