Nanoelectromechanical switch with low voltage drive

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Jang, J E ^a,b   Cha, S N ^a,b   Choi, Y ^a   Butler, T P ^a   Kang, D J ^c   Hasko, D G ^d   Jung, J E ^b   Jin, Y W ^a   Kim, J M ^a   Amaratunga, G A J ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Sungkyunkwan University   (South Korea)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ETCHING; GALLIUM ALLOYS; OPTICAL DESIGN; TRIODES;

DEVICE STABILITY; DRIVE VOLTAGES; ETCHING PROCESSES; LOW VOLTAGES; NARROW GAPS; SELECTIVE ETCHING; SELF-ALIGNMENT; STRUCTURAL ELEMENTS; TRIODE STRUCTURES;

LITHOGRAPHY;

EID: 52349106313     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2983743     Document Type: Article

References (12)

1. P. Kim and C. M. Lieber, Science SCIEAS 0036-8075 10.1126/science.286. 5447.2148 286, 2148 (1999).
2. S. Akita, Y. Nakayama, S. Mizooka, Y. Takano, T. Okawa, Y. Miyatake, S. Yamanaka, M. Tsuji, and T. Nosaka, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1403275 79, 1691 (2001).
3. S. N. Cha, J. E. Jang, Y. Choi, D. -J. Kang, D. G. Hasko, J. E. Jung, J. M. Kim, and G. A. J. Amaratunga, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1868064 86, 083105 (2005).
4. J. E. Jang, S. N. Cha, Y. Choi, D. J. Kang, D. G. Hasko, J. E. Jung, J. M. Kim, and G. A. J. Amaratunga, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2077858 87, 163114 (2005).
5. J. E. Jang, S. N. Cha, Y. Choi, D. J. Kang, D. G. Hasko, J. E. Jung, J. M. Kim, and G. A. J. Amaratunga, Nat. Nanotechnol. NNAABX 1748-3387 10.1038/nnano.2007.417 3, 26 (2008).
6. M. Dequesnes, S. V. Rotkin, and N. R. Aluru, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/13/1/325 13, 120 (2002).
7. J. M. Kinaret, T. Nord, and S. Viefers, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1557324 82, 1287 (2003).
8. V. I. Merkulov, D. H. Lowndes, Y. Y. Wei, G. Eres, and E. Voelkl, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126705 76, 3555 (2000).
9. M. Chhowalla, K. B. K. Teo, C. Ducati, N. L. Rupesinghe, G. A. J. Amaratunga, A. C. Ferrari, D. Roy, J. Robertson, and W. I. Milne, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1410322 90, 5308 (2001).
10. K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, G. Pirio, P. Legagneux, F. Wyczisk, D. Pribat, and D. G. Hasko, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1461868 80, 2011 (2002).
11. K. B. K. Teo, S. -B. Lee, M. Chhowalla, V. Semet, V. T. Binh, O. Groening, M. Castignolles, A. Loiseau, G. Pirio, P. Legagneux, D. Pribat, D. G. Hasko, H. Ahmed, G. A. J. Amaratunga, and W. I. Milne, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/14/2/321 14, 204 (2003).
12. B. Prince, Semiconductor Memories, 2nd ed. (Wiley, New York, 1991), Chap..