NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1578-1583

  Jang, Weon Wi ^a   Yoon, Jun Bo ^a   Kim, Min Sang ^b   Lee, Ji Myoung ^b   Kim, Sung Min ^b   Yoon, Eun Jung ^b   Cho, Keun Hwi ^b   Lee, Sung Young ^b   Choi, In Hyuk ^b   Kim, Dong Won ^b   Park, Donggun ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Abrupt switching; Nanoelectromechanical systems (NEMS); Suspended beam memory (SBM); Zero off current

Indexed keywords

GALLIUM ALLOYS; METALS; NITRIDES; OPTICAL DESIGN; SWITCHES; TIN; TITANIUM; TITANIUM COMPOUNDS; TITANIUM OXIDES;

ABRUPT SWITCHING; AIR GAPS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR; CURRENT CHARACTERISTICS; FABRICATION TECHNOLOGIES; HIGH-DENSITY; NANO-ELECTRO-MECHANICAL SYSTEMS; NANOELECTROMECHANICAL SYSTEMS (NEMS); NON-VOLATILE MEMORIES; OFF CURRENT; ON/OFF CURRENT RATIO; SUSPENDED BEAM MEMORY (SBM); THICK BEAM; TOP-DOWN; TWO TYPES; ZERO OFF CURRENT;

TITANIUM NITRIDE;

EID: 50849092503     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.026     Document Type: Article

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