-
1
-
-
13244290157
-
-
PPHOED 1062-7995, () 10.1002/pi577;, Thin Solid Films THSFAP 0040-6090 403-404, 162 (2002) 10.1016/S0040-6090(01)01556-5;, Sol. Energy SRENA4 0038-092X 77, 961 (2004) 10.1016/j.solener.2004.05.002;, Thin Solid Films THSFAP 0040-6090 487, 113 (2005) 10.1016/j.tsf.2005.01.047;, J. Non-Cryst. Solids JNCSBJ 0022-3093 352, 984 (2006). 10.1016/j.jnoncrysol.2006.01.024
-
A. G. Aberle, A. Straub, P. I. Widenborg, A. B. Sproul, Y. Huang, and P. Campbell, Prog. Photovoltaics PPHOED 1062-7995 13, 37 (2005) 10.1002/pip.577; R. B. Bergmann and J. H. Werner, Thin Solid Films THSFAP 0040-6090 403-404, 162 (2002) 10.1016/S0040-6090(01)01556-5; W. Fuhs, S. Gall, B. Rau, M. Schmidt, and J. Schneider, Sol. Energy SRENA4 0038-092X 77, 961 (2004) 10.1016/j.solener. 2004.05.002; I. Gordon, D. Van Gestel, K. Van Nieuwenhuysen, L. Carnel, G. Beaucarne, and J. Poortmans, Thin Solid Films THSFAP 0040-6090 487, 113 (2005) 10.1016/j.tsf.2005.01.047; C. W. Teplin, D. S. Ginley, and H. M. Branz, J. Non-Cryst. Solids JNCSBJ 0022-3093 352, 984 (2006). 10.1016/j.jnoncrysol.2006. 01.024
-
(2005)
Prog. Photovoltaics
, vol.13
, pp. 37
-
-
Aberle, A.G.1
Straub, A.2
Widenborg, P.I.3
Sproul, A.B.4
Huang, Y.5
Campbell, P.6
Bergmann, R.B.7
Werner, J.H.8
Fuhs, W.9
Gall, S.10
Rau, B.11
Schmidt, M.12
Schneider, J.13
Gordon, I.14
Van Gestel, D.15
Van Nieuwenhuysen, K.16
Carnel, L.17
Beaucarne, G.18
Poortmans, J.19
Teplin, C.W.20
Ginley, D.S.21
Branz, H.M.22
more..
-
2
-
-
33751112470
-
Significant improvement in silicon chemical vapor deposition epitaxy above the surface dehydrogenation temperature
-
DOI 10.1063/1.2363766
-
Q. Wang, C. W. Teplin, P. Stradins, B. To, K. M. Jones, and H. M. Branz, J. Appl. Phys. JAPIAU 0021-8979 100, 093520 (2006). 10.1063/1.2363766 (Pubitemid 44772570)
-
(2006)
Journal of Applied Physics
, vol.100
, Issue.9
, pp. 093520
-
-
Wang, Q.1
Teplin, C.W.2
Stradins, P.3
To, B.4
Jones, K.M.5
Branz, H.M.6
-
3
-
-
77249109892
-
-
APPLAB 0003-6951,. 10.1063/1.3309751
-
K. Alberi, I. M. Martin, M. Shub, C. W. Teplin, M. J. Romero, R. C. Reedy, E. Iwaniczko, A. Duda, P. Stradins, H. M. Branz, and D. L. Young, Appl. Phys. Lett. APPLAB 0003-6951 96, 073502 (2010). 10.1063/1.3309751
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 073502
-
-
Alberi, K.1
Martin, I.M.2
Shub, M.3
Teplin, C.W.4
Romero, M.J.5
Reedy, R.C.6
Iwaniczko, E.7
Duda, A.8
Stradins, P.9
Branz, H.M.10
Young, D.L.11
-
4
-
-
45849084704
-
-
THSFAP 0040-6090,. 10.1016/j.tsf.2007.12.082
-
P. Dogan, E. Rudigier, F. Fenske, K. Y. Lee, B. Gorka, B. Rau, E. Conrad, and S. Gall, Thin Solid Films THSFAP 0040-6090 516, 6989 (2008). 10.1016/j.tsf.2007.12.082
-
(2008)
Thin Solid Films
, vol.516
, pp. 6989
-
-
Dogan, P.1
Rudigier, E.2
Fenske, F.3
Lee, K.Y.4
Gorka, B.5
Rau, B.6
Conrad, E.7
Gall, S.8
-
5
-
-
37349003867
-
Radical species involved in hotwire (catalytic) deposition of hydrogenated amorphous silicon
-
DOI 10.1016/j.tsf.2007.05.002, PII S0040609007007614
-
W. Zheng and A. Gallagher, Thin Solid Films THSFAP 0040-6090 516, 929 (2008). 10.1016/j.tsf.2007.05.002 (Pubitemid 350298338)
-
(2008)
Thin Solid Films
, vol.516
, Issue.6
, pp. 929-939
-
-
Zheng, W.1
Gallagher, A.2
-
6
-
-
0142069693
-
-
APPLAB 0003-6951,. 10.1063/1.98278
-
J. H. Comfort and R. Reif, Appl. Phys. Lett. APPLAB 0003-6951 51, 2016 (1987). 10.1063/1.98278
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 2016
-
-
Comfort, J.H.1
Reif, R.2
-
7
-
-
77949708371
-
-
JAPIAU 0021-8979,. 10.1063/1.3298455
-
I. T. Martin, C. W. Teplin, J. R. Doyle, H. M. Branz, and P. Stradins, J. Appl. Phys. JAPIAU 0021-8979 107, 054906 (2010). 10.1063/1.3298455
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 054906
-
-
Martin, I.T.1
Teplin, C.W.2
Doyle, J.R.3
Branz, H.M.4
Stradins, P.5
-
8
-
-
64349114473
-
-
THSFAP 0040-6090,. 10.1016/j.tsf.2009.01.059
-
I. T. Martin, H. M. Branz, P. Stradins, D. L. Young, R. C. Reedy, and C. W. Teplin, Thin Solid Films THSFAP 0040-6090 517, 3496 (2009). 10.1016/j.tsf.2009.01.059
-
(2009)
Thin Solid Films
, vol.517
, pp. 3496
-
-
Martin, I.T.1
Branz, H.M.2
Stradins, P.3
Young, D.L.4
Reedy, R.C.5
Teplin, C.W.6
-
9
-
-
20944444770
-
Monitoring and modeling silicon homoepitaxy breakdown with real-time spectroscopic ellipsometry
-
DOI 10.1063/1.1903110, 103536
-
C. W. Teplin, D. H. Levi, E. Iwaniczko, K. M. Jones, J. D. Perkins, and H. M. Branz, J. Appl. Phys. JAPIAU 0021-8979 97, 103536 (2005). 10.1063/1.1903110 (Pubitemid 40866067)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.10
, pp. 1-7
-
-
Teplin, C.W.1
Levi, D.H.2
Iwaniczko, E.3
Jones, K.M.4
Perkins, J.D.5
Branz, H.M.6
-
10
-
-
33845534763
-
-
PRBMDO 0163-1829, (); 10.1103/PhysRevB.74.235428, Appl. Phys. Lett. APPLAB 0003-6951 77, 3589 (2000). 10.1063/1.1328767
-
C. W. Teplin, E. Iwaniczko, B. To, H. Moutinho, P. Stradins, and H. M. Branz, Phys. Rev. B PRBMDO 0163-1829 74, 235428 (2006); 10.1103/PhysRevB.74. 235428 J. Thiesen, H. Branz, and R. S. Crandall, Appl. Phys. Lett. APPLAB 0003-6951 77, 3589 (2000). 10.1063/1.1328767
-
(2006)
Phys. Rev. B
, vol.74
, pp. 235428
-
-
Teplin, C.W.1
Iwaniczko, E.2
To, B.3
Moutinho, H.4
Stradins, P.5
Branz, H.M.6
Thiesen, J.7
Branz, H.8
Crandall, R.S.9
-
11
-
-
30344473307
-
Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament
-
DOI 10.1016/j.jcrysgro.2005.11.055, PII S002202480501376X
-
C. W. Teplin, Q. Wang, E. Iwaniczko, K. M. Jones, M. Al-Jassim, R. C. Reedy, and H. M. Branz, J. Cryst. Growth JCRGAE 0022-0248 287, 414 (2006). 10.1016/j.jcrysgro.2005.11.055 (Pubitemid 43069666)
-
(2006)
Journal of Crystal Growth
, vol.287
, Issue.2
, pp. 414-418
-
-
Teplin, C.W.1
Wang, Q.2
Iwaniczko, E.3
Jones, K.M.4
Al-Jassim, M.5
Reedy, R.C.6
Branz, H.M.7
-
12
-
-
6244251920
-
-
JAPIAU 0021-8979,. 10.1063/1.358597
-
D. J. Eaglesham, J. Appl. Phys. JAPIAU 0021-8979 77, 3597 (1995). 10.1063/1.358597
-
(1995)
J. Appl. Phys.
, vol.77
, pp. 3597
-
-
Eaglesham, D.J.1
-
13
-
-
5844399719
-
-
APPLAB 0003-6951,. 10.1063/1.96673
-
B. S. Meyerson, Appl. Phys. Lett. APPLAB 0003-6951 48, 797 (1986). 10.1063/1.96673
-
(1986)
Appl. Phys. Lett.
, vol.48
, pp. 797
-
-
Meyerson, B.S.1
-
14
-
-
22944440062
-
Structural defects and photoluminescence of epitaxial Si films grown at low temperatures
-
DOI 10.1016/j.tsf.2005.01.054, PII S0040609005000830, International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications
-
K. Petter, I. Sieber, B. Rau, S. Brehme, K. Lips, and W. Fuhs, Thin Solid Films THSFAP 0040-6090 487, 137 (2005). 10.1016/j.tsf.2005.01.054 (Pubitemid 41046316)
-
(2005)
Thin Solid Films
, vol.487
, Issue.1-2
, pp. 137-141
-
-
Petter, K.1
Sieber, I.2
Rau, B.3
Brehme, S.4
Lips, K.5
Fuhs, W.6
-
15
-
-
0033316528
-
Hydrogen interaction with clean and modified silicon surfaces
-
DOI 10.1016/S0167-5729(99)00005-9
-
K. Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov, and M. Katayama, Surf. Sci. Rep. SSREDI 0167-5729 35, 1 (1999). 10.1016/S0167-5729(99)00005-9 (Pubitemid 30547697)
-
(1999)
Surface Science Reports
, vol.35
, Issue.1
, pp. 1-69
-
-
Oura, K.1
Lifshits, V.G.2
Saranin, A.A.3
Zotov, A.V.4
Katayama, M.5
-
16
-
-
25544452706
-
-
PRBMDO 0163-1829,. 10.1103/PhysRevB.45.9485
-
U. Höfer, L. P. Li, and T. F. Heinz, Phys. Rev. B PRBMDO 0163-1829 45, 9485 (1992). 10.1103/PhysRevB.45.9485
-
(1992)
Phys. Rev. B
, vol.45
, pp. 9485
-
-
Höfer, U.1
Li, L.P.2
Heinz, T.F.3
-
17
-
-
0013116368
-
-
JAPIAU 0021-8979,. 10.1063/1.335418
-
T. J. Donahue and R. Reif, J. Appl. Phys. JAPIAU 0021-8979 57, 2757 (1985). 10.1063/1.335418
-
(1985)
J. Appl. Phys.
, vol.57
, pp. 2757
-
-
Donahue, T.J.1
Reif, R.2
-
18
-
-
0037348024
-
-
JAPIAU 0021-8979, () 10.1063/1.1542657;, J. Cryst. Growth JCRGAE 0022-0248 268, 41 (2004). 10.1016/j.jcrysgro.2004.05.003
-
M. Nerding, L. Oberbeck, T. A. Wagner, R. B. Bergmann, and H. P. Strunk, J. Appl. Phys. JAPIAU 0021-8979 93, 2570 (2003) 10.1063/1.1542657; A. Straub, N. P. Harder, Y. D. Huang, and A. G. Aberle, J. Cryst. Growth JCRGAE 0022-0248 268, 41 (2004). 10.1016/j.jcrysgro.2004.05.003
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 2570
-
-
Nerding, M.1
Oberbeck, L.2
Wagner, T.A.3
Bergmann, R.B.4
Strunk, H.P.5
Straub, A.6
Harder, N.P.7
Huang, Y.D.8
Aberle, A.G.9
-
19
-
-
18144452019
-
-
THSFAP 0040-6090,. 10.1016/j.tsf.2003.11.058
-
B. Rau, I. Sieber, B. Selle, S. Brehme, U. Knipper, S. Gall, and W. Fuhs, Thin Solid Films THSFAP 0040-6090 451-452, 644 (2004). 10.1016/j.tsf.2003.11. 058
-
(2004)
Thin Solid Films
, vol.451-452
, pp. 644
-
-
Rau, B.1
Sieber, I.2
Selle, B.3
Brehme, S.4
Knipper, U.5
Gall, S.6
Fuhs, W.7
-
20
-
-
0142106809
-
-
THSFAP 0040-6090,. 10.1016/S0040-6090(03)01148-9
-
Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, and K. Wada, Thin Solid Films THSFAP 0040-6090 444, 138 (2003). 10.1016/S0040-6090(03)01148-9
-
(2003)
Thin Solid Films
, vol.444
, pp. 138
-
-
Mori, Y.1
Yoshii, K.2
Yasutake, K.3
Kakiuchi, H.4
Ohmi, H.5
Wada, K.6
-
21
-
-
0027884236
-
-
SSREDI 0167-5729, () 10.1016/0167-5729(93)90016-I
-
T. Engel, Surf. Sci. Rep. SSREDI 0167-5729 18, 93 (1993) 10.1016/0167-5729(93)90016-I
-
(1993)
Surf. Sci. Rep.
, vol.18
, pp. 93
-
-
Engel, T.1
-
22
-
-
0036492928
-
x layers embedded in single crystalline silicon
-
DOI 10.1016/S1386-9477(02)00249-7, PII S1386947702002497
-
A. Sticht, M. Markmann, K. Brunner, and G. Abstreiter, Physica E (Amsterdam) PELNFM 1386-9477 13, 978 (2002). 10.1016/S1386-9477(02)00249-7 (Pubitemid 34648862)
-
(2002)
Physica E: Low-Dimensional Systems and Nanostructures
, vol.13
, Issue.2-4
, pp. 978-981
-
-
Sticht, A.1
Markmann, M.2
Brunner, K.3
Abstreiter, G.4
-
23
-
-
11644300302
-
-
JAPIAU 0021-8979,. 10.1063/1.339302
-
L. M. Garverick, J. H. Comfort, T. R. Yew, R. Reif, F. A. Baiocchi, and H. S. Luftman, J. Appl. Phys. JAPIAU 0021-8979 62, 3398 (1987). 10.1063/1.339302
-
(1987)
J. Appl. Phys.
, vol.62
, pp. 3398
-
-
Garverick, L.M.1
Comfort, J.H.2
Yew, T.R.3
Reif, R.4
Baiocchi, F.A.5
Luftman, H.S.6
|