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Volumn 96, Issue 20, 2010, Pages

Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °c

Author keywords

[No Author keywords available]

Indexed keywords

DIHYDRIDES; DISLOCATION DENSITIES; EPITAXIAL SILICON; HOT WIRE CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE GROWTH; SILICON LAYER; SUBSTRATE TEMPERATURE; SURFACE TERMINATION;

EID: 77952986103     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3422474     Document Type: Article
Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.