Structural defects and photoluminescence of epitaxial Si films grown at low temperatures

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 137-141

  Petter, K ^a   Sieber, I ^a   Rau, B ^a   Brehme, S ^a   Lips, K ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

CVD; Rod like defects; Silicon; Structural properties

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; EPITAXIAL GROWTH; ETCHING; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; THERMAL EFFECTS;

ETCH PITS; GAS PHASE; ROD-LIKE DEFECTS; STRUCTURAL PROPERTIES;

THIN FILMS;

EID: 22944440062     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.054     Document Type: Conference Paper

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