Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6989-6993

  Dogan, P ^a   Rudigier, E ^a   Fenske, F ^a   Lee, K Y ^a   Gorka, B ^a   Rau, B ^a   Conrad, E ^a   Gall, S ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Crystalline silicon; Extended defects; Low temperature epitaxy; Secco etching

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; SILICON;

E BEAM EVAPORATIONS; ELECTRICAL (ELECTRONIC) PROPERTIES; EPITAXIAL SI; SI FILMS; SUBSTRATE TEMPERATURE (ST);

STRUCTURAL PROPERTIES;

EID: 45849084704     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.082     Document Type: Article

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