Zirconia-based solid solutions-New materials of photoelectronics

Optical Memory and Neural Networks (Information Optics)

Volumn 18, Issue 4, 2009, Pages 312-321

  Buzynin, A N ^a   Grishina, T N ^b   Kiselyov, T V ^b   Kosuhina, L A ^b   Kravchenko, N V ^b   Lomonova, E E ^a   Panov, V A ^a   Sidorov, M S ^b   Trishenkov, M A ^b   Filachev, A M ^b  

^a PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^b Federal State Unitary Enterprise   (Russian Federation)

Author keywords

Antireflecting coating; Epitaxy; Fianite; Optoelectronics; Protective oxide; Semiconductor on insulator; Zirconium dioxide

Indexed keywords

ANTI-REFLECTING COATING; FIANITE; NEW MATERIAL; PHOTOELECTRONICS; PROTECTIVE OXIDES; ZIRCONIUM DIOXIDE;

COATINGS; CRYSTAL GROWTH; CRYSTALLIZATION; OPTOELECTRONIC DEVICES; SOLIDIFICATION; ZIRCONIA; ZIRCONIUM;

SOLID SOLUTIONS;

EID: 77952905773     PISSN: 1060992X     EISSN: 19347898     Source Type: Journal    
DOI: 10.3103/S1060992X09040109     Document Type: Article

References (22)

1. Aleksandrov, V. I., Osiko, V. V., Prokhorov, A. M., and Tatarintsev, V. M., New Technique of the Synthesis of Refractory Single Crystals and Molten Ceramic Materials, Vestnic AN SSSR, 1973, no. 12, pp. 29-39 [in Russian].
2. Aleksandrov, V. I., Osiko, V. V., Tatarintsev, V. M., and Prokhorov, A. M., Synthesis and Crystal Growth of Refractory Materials by RF Melting in a Cold Container, Current Topics in Materials Science, 1978, vol. 1, pp. 421-480.
3. Golecki, I., Manasevit, H. M., Moudy, L. A., et al., Heteroepitaxial Si Films on Yttria-Stabilized, Cubic Zirconia Substrates, Appl. Phys. Lett., 1983, vol. 42, no. 6, pp. 501-503.
4. Buzynin, A. N., Osiko, V. V., Lomonova, E. E., et al., Epitaxial Films of GaAs and GaN on Fianite Substrate, Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, MRS Simp. Proc. 1998, Pittsburg, PA, vol. 512, pp. 205-210.
5. Buzynin, A. N., Osiko, V. V., Voron'ko, Yu. K., et al., GaN and GaNAs on the Bulk and Porous Si and GaAs Substrates with Fianite Sublayer, Izv. RAN, Ser. Fizich., 2005, vol. 69, no. 4, pp. 211-217 [in Russian].
6. Wang, S. J., Ong, C. K., Xu, S. Y., et al., Electrical Properties of Crystalline YSZ Films on Silicon as Alternative Gate Dielectrics, Semicond. Sci. Technol., 2001, vol. 16, pp. L13-L16.
7. Wang, S. J. and Ong, C. K., Rapid Thermal Annealing Effect on the Electrical Properties of Crystalline YSZ Gate Dielectrics, Semiconductor Science and Technology, 2003, vol. 18, pp. 154-157.
8. 2 Gate Dielectric on SiGe, Applied Physics Letters, 2000, vol. 76, pp. 502-504.
9. 2 High-k Gate Dielectrics for InAlN/AlN/GaN MOS-HEMTs, Semicond. Sci. Technol., 2007, vol. 22, pp. 1272-1275.
10. Sundaram, K. B., Wahid, P. F., and Sisk, P. J., Thin Solid Films, 1992, vol. 221, pp. 13-18.
11. Hata, T., Sasakia, K., Ichikawa, Y., and Sasakia, K., Yttria-Stabilized Zirconia (YSZ) Heteroepitaxially Grown on Si Substrates by Reactive Sputtering, Vacuum, 2000, vol. 59, issues 2-3, pp. 381-389.
12. Buzynin, Yu. N., Drozdov, M. N., Buzynin, A. N., Osiko, V. V., et al., Heteroepitaxial III-V Films on Fianite Substrates and Buffer Layers, Bull. of the Russian Academy of Sciences: Physics, 2009, vol. 73, no. 4, pp. 485-490.
13. Samara, G. A., J. Appl. Phys., 1990, vol. 68, p. 4214.
14. Beck, J., Woodall, M., Scritchfield, R., et al., Gated IR Imaging with 128 × 128 HgCdTe Electron Avalanche Photodiode FPA, Proc. SPIE, 2007, vol. 6542, p. 654217.
15. VLSI Elecrtonics Microstructure Science, Einshruch, N. G. and Brown, D. M., Academic Press, Inc., 2004, vol. 8.
16. Kuzminov, Yu. S., Lomonova, E. E., and Osiko, V. V., Refractory Materials from a Cold Crucible, Moscow: Nauka, 2004 [in Russian].
17. URL: http://ru. wikipedia. org/wiki/Zirconium oxide.
18. URL: http://ru. wikipedia. org/wiki/Fianite.
19. Sheftal, N. N. and Buzynin, A. N., Vestnik Moscow Univ., 1972, no. 3, p. 102, Nat. Trans. Cent., The Yohn Crenan Library, 35w, 33rd St., Chicago IL 60616 USA.
20. Shahidi, G. G., SOI Technology for the GHz Era. IBM, J. of Research and Development, 2002, vol. 46, no. 2/3.
21. Buckingham, M. J., Noise in Electronic Devices and Systems, New York: Chichester Halsted Press, 1983.
22. Buzynin, A. N., Lomonova, E. E., Sidorov, M. S., Trishenkov, M. A., Troshkov, A. E., Khakuashev, P. E., and Chinareva, I. V., Fianite-A New Material for Protection, Stabilization and Antireflection of Germanium Photodetectors (in press).