Heteroepitaxial III-V films on fianite substrates and buffer layers

Bulletin of the Russian Academy of Sciences: Physics

Volumn 73, Issue 4, 2009, Pages 485-490

  Buzynin, Yu N ^a   Drozdov, M N ^a   Buzynin, A N ^b   Osiko, V V ^b   Zvonkov, B N ^c   Drozdov, Yu N ^a   Parafin, A E ^a   Murel, A V ^a   Khrykin, O I ^a   Luk'yanov, A E ^d   Luk'yanov, F A ^d   Sennov, R A ^d  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^c LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVITIES; ELECTRICAL HOMOGENEITY; FIANITE; GAAS; GAAS SUBSTRATES; GAN FILM; HETEROEPITAXIAL; HETEROSTRUCTURES; III-V COMPOUNDS; INGAAS/GAAS; METAL-ORGANIC VAPOUR PHASE EPITAXY; POROUS SI; SINGLE BUFFER LAYER; STRUCTURAL QUALITIES; TWO LAYERS;

BUFFER LAYERS; CRYSTAL GROWTH; EPITAXIAL FILMS; EPITAXIAL LAYERS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MULTILAYER FILMS; OPTICAL WAVEGUIDES; POROUS SILICON; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 65649094802     PISSN: 10628738     EISSN: None     Source Type: Journal    
DOI: 10.3103/S106287380904011X     Document Type: Article

References (10)

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