High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Optics Express

Volumn 18, Issue 11, 2010, Pages 11025-11032

  Kim, Sun Kyung ^a   Lee, Jin Wook ^a   Ee, Ho Seok ^b   Moon, Yong Tae ^a   Kwon, Soon Hong ^b   Kwon, Hoki ^a   Park, Hong Gyu ^b  

^a LG Innotek Co Ltd   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SILVER;

CONSTRUCTIVE INTERFERENCE; DIELECTRIC LAYER; ELECTRICAL DEGRADATION; EXTRACTION EFFICIENCIES; FAR FIELD MEASUREMENT; HIGH EFFICIENCY; LEAKY MODES; MATERIAL ABSORPTION; OUTPUT POWER; SILVER MIRROR; TEXTURED SURFACE; VERTICAL EMISSION;

EXTRACTION;

GALLIUM; GALLIUM NITRIDE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; SEMICONDUCTOR;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LIGHTING; SEMICONDUCTORS;

EID: 77952830602     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.011025     Document Type: Article

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