Enhanced Light Output Power of GaN-Based Vertical Light-Emitting Diodes by Using Highly Reflective ITO-Ag-Pt Reflectors

IEEE Photonics Technology Letters

Volumn 20, Issue 23, 2008, Pages 1932-1934

  Jeong, Tak ^a   Kim, Kang Ho ^b   Lee, Hyun Haeng ^b   Lee, Seung Jae ^b   Lee, Sang Hern ^b   Baek, Jong Hyeob ^b   Lee, June Key ^a  

^a Chonnam National University   (South Korea)

^b Korean Photonics Technology Institute   (South Korea)

Author keywords

Capping layer GaN; indium tin oxide (ITO) Ag Pt; ohmic contacts reflectors; vertical light emitting diodes (VLEDs)

Indexed keywords

EID: 85008050307     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/LPT.2008.2005421     Document Type: Article

References (15)

1. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'shea, M. J. Ludo-wise, G. Chiristenson, Y.-C. Chen, C. Lowery, P. S. Martin, S. Subra-manya, W. Gotz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGalnN flip-chip light-emitting diodes,” Appl. Phys. Lett., vol. 78, pp. 3379–3381, May 2001.
2. D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, and H. P. Lee, “Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and A1 or Ag,” Appl. Phys. Lett., vol. 83, pp. 311–313, Jul. 2003.
3. C. F. Shen, S. J. Chang Member IEEE, W. S. Chen, T. K. Ko, C. T. Kuo, and S. C. Shei, “Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate,” IEEE Photon. Technol. Lett., vol. 19, no. 10, pp. 780–782, May 15, 2007.
4. B. S. Tan, S. Yuan, and X. J. Kang, “Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate,” Appl. Phys. Lett., vol. 84, pp. 2757–2759, Apr. 2004.
5. S.-J. Wang, K.-M. Uang, S.-L. Chen, Y.-C. Yang, S.-C. Chang, T.-M. Chen, C.-H. Chen, and B.-W. Liou, “Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes,” Appl. Phys. Lett., vol. 87, no. 011111, Jul. 2005.
6. K. Kawasaki, C. Koike, Y. Aoyagi, and M. Takeuchi, “Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique,” Appl. Phys. Lett., vol. 89, no. 26114, Dec. 2006.
7. S.-L. Chen, S.-J. Wang, K.-M. Uang, T.-M. Chen, W.-C. Lee, and B.-W. Liou, “Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques,” IEEE Photon. Technol. Lett., vol. 19, no. 6, pp. 351–353, Mar. 15, 2007.
8. X. A. Cao and S. D. Arthur, “High-power and reliable operation of vertical light-emitting diodes on bulk GaN,” Appl. Phys. Lett., vol. 85, no. 18, pp. 3971–3973, Aug. 2004.
9. W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftogg and electroplating techniques,” IEEE Photon. Technol. Lett., vol. 17, no. 9, pp. 1809–1811, Sep. 2005.
10. H.-M. Jung, G.-Y. Nam, B.-K. Choi, T.-H. Lee, H.-S. Kim, S.-K. Jeong, E.-H. Park, and C.-T. Kim, “Via-hole-based vertical GaN light emitting diodes,” Appl. Phys. Lett., vol. 91, p. 111106, Sep. 2007.
11. J.-O. Song, J. S. Kwak, Y. Park, and T.-Y. Seong, “Ohmic and degradation mechanisms of Ag contacts on p-type GaN,” Appl. Phys. Lett., vol. 86, p. 062104, Feb. 2005.
12. C. H. Chou, C. L. Lin, Y. C. Chuang, H. Y. Bor, and C. Y. Liu, “High thermally stable Ni/Ag(Al) alloy contacts on p-GaN,” Appl. Phys. Lett., vol. 90, p. 022103, Jan. 2007.
13. S. Kim, J.-H. Jang, and J.-S. Lee, “Thermally stable and highly reflective ITO/Ag-based ohmic contacts to p-GaN,” J. Electrochem. Soc., vol. 154, no. 11, pp. H973-H976, Sep. 2007.
14. J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, S.-J. Park, M.-H. Kim, D. Choi, and K. Min, “Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes,” Appl. Phys. Lett., vol. 88, p. 043507, Jan. 2006.
15. H. Kim, K. H. Baik, J. Cho, J. W. Lee, S. Yoon, H. Kim, S.-N. Lee, C. Sone, Y. Park, and T.-Y. Seong, “High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 336–338, Mar. 1, 2007.