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Volumn , Issue , 2010, Pages 120-123

Silicide-based release of high aspect-ratio microstructures

Author keywords

[No Author keywords available]

Indexed keywords

ETCH HOLE; HIGH ASPECT RATIO; LATERAL DIMENSION; RELEASE METHODS; SACRIFICIAL LAYER; SILICIDATION; VOLUME SHRINKAGE;

EID: 77952779010     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2010.5442550     Document Type: Conference Paper
Times cited : (7)

References (11)
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  • 2
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    • Fabrication, chemical etching
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  • 3
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    • I. Lee, et. al, "Development and analysis of the vertical capacitive accelerometer," Sensors and Actuators A: Physical, vol. 119, pp. 8-18, 2005.
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    • Lee, I.1
  • 4
    • 33744534404 scopus 로고    scopus 로고
    • Fabrication of capacitive absolute pressure sensor using Si-Au
    • ser. 34
    • K. R. Lee, et. al, "Fabrication of capacitive absolute pressure sensor using Si-Au...," J. Phys.: Conf., ser. 34 393-398, 2006.
    • (2006) J. Phys.: Conf. , pp. 393-398
    • Lee, K.R.1
  • 7
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    • Limitation of spacer thickness
    • J. J. SUNG and C.-Y. Lu, "Limitation of spacer thickness...," IEEE Electron Device Lett., vol. 10, pp. 481-483, 1989.
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  • 8
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    • Characterization of nickel silicide thin films by spectroscopy
    • M. Bhaskaran, et. al, "Characterization of nickel silicide thin films by spectroscopy...," Micron, vol. 40, pp. 99-103, 2009.
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    • Bhaskaran, M.1
  • 9
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    • Surface roughening during titanium silicide formation
    • C. Lavoie, et al., "Surface roughening during titanium silicide formation..." Proceedings of MRS, vol. 440, pp. 389-394, 1997.
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    • Lavoie, C.1
  • 10
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    • Surface and interface morphology of CoSi2
    • G.-P. Ru, et al., "Surface and interface morphology of CoSi2...," Materials Characterization, vol. 48, pp. 229-235, 2002.
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  • 11
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    • Vacuum encapsulation of resonant devices using permeable polysilicon
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.