Fabrication of capacitive absolute pressure sensor using Si-Au eutectic bonding in SOI wafer

Journal of Physics: Conference Series

Volumn 34, Issue 1, 2006, Pages 393-398

  Lee, Kang Ryeol ^a   Kim, Kunnyun ^a   Park, Hyo Derk ^a   Kim, Yong Kook ^b   Choi, Seung Woo ^c   Choi, Woo Beom ^c  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Korea University   (South Korea)

^c BNP Science Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744534404     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/34/1/064     Document Type: Article

References (4)

1. Chau K H L, C D Fung, P R Harris and G A Dahrooge 1991 A versatile polysilicon diaphragm pressure sensor chip Digest Tech. Papers Electron Devices Meeting (Washington) p 761-764
2. Habibi M, E Lueder, T Kallfass and D Horst 1995 A surface micromachined capacitive absolute pressure sensor array on a glass substrate Sens. Actuat. A 46 125-128 doi:10.1016/0924-4247(94)00874-H.
3. A V Chavan K D Wise 2001 Batch-processed vacuum-sealed capacitive pressure sensors J. Microelectromech. Syst. 10 580-588 doi:10.1109/84.967381.
4. Goustouridis D, P Normand and D Tsoukalas 1998 Ultraminiature silicon capacitive pressuresensing elements obtained by silicon fusion bonding Sens. Actuat. A 68 269-274 doi:10.1016/S0924-4247(98)00016-8.