Suppression of defects during metal-induced lateral crystallization of polycrystalline-silicon thin films by directed lateral growth

Japanese Journal of Applied Physics

Volumn 48, Issue 9 Part 1, 2009, Pages 0912031-0912035

  Kitahara, Kuninori ^a   Kambara, Junji ^a   Kobata, Mitsunori ^a   Tsuda, Hiroshi ^b  

^a SHIMANE UNIVERSITY   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS REGIONS; DEFECT FORMATION; GLASS SUBSTRATES; GROWTH DIRECTIONS; LATERAL GROWTH; LATTICE DEFECT DENSITIES; METAL-INDUCED LATERAL CRYSTALLIZATION; MICRO RAMAN SPECTROSCOPY; POLY-SI; POLYCRYSTALLINE; SILICON THIN FILM; SOLID-PHASE CRYSTALLIZATION; SOURCE REGION;

AMORPHOUS MATERIALS; CATALYSTS; CRYSTALLIZATION; DEFECTS; POLYSILICON; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DENSITY;

EID: 77952716502     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.091203     Document Type: Article

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