Growth of M -plane (10-10) InN on LiAlO2 (100) substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Takagi, Yusuke ^a   Muto, Daisuke ^a   Yamaguchi, Tomohiro ^a   Araki, Tsutomu ^a   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL RELATIONSHIPS; HIGH TEMPERATURE; IN-PLANE; INN FILMS; LOW TEMPERATURES; M-PLANE; RADIO FREQUENCY PLASMA; RICH CONDITIONS; SURFACE ELECTRON ACCUMULATION; V/III RATIO;

EPITAXIAL GROWTH; LITHIUM ALLOYS; MOLECULAR BEAMS; SUBSTRATES;

MOLECULAR BEAM EPITAXY;

EID: 77952715324     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880980     Document Type: Article

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