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Volumn , Issue , 2010, Pages 119-125

Information theory based design of phase-change memories

Author keywords

[No Author keywords available]

Indexed keywords

CELL STRUCTURE; DETERMINISTIC BEHAVIOR; MEMORY CELL; MEMORY TECHNOLOGY; MULTIPLE BITS; NON-VOLATILE MEMORIES; PROGRAMMABLE RESISTORS; STORAGE CAPACITY;

EID: 77952686435     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ITA.2010.5454135     Document Type: Conference Paper
Times cited : (1)

References (12)
  • 1
    • 77950580500 scopus 로고    scopus 로고
    • Phase change memory technology
    • April available on Arxiv.org
    • G. W. Burr et al., "Phase change memory technology," Journal of Vacuum Science and Technology, April 2010, available on Arxiv.org.
    • (2010) Journal of Vacuum Science and Technology
    • Burr, G.W.1
  • 2
    • 77952724636 scopus 로고    scopus 로고
    • Two-bit cell operation in diode-switch phase change memory cells with 90nm technology
    • D.-H. Kang et al., "Two-bit cell operation in diode-switch phase change memory cells with 90nm technology," in Proc. VLSI'08, Hyderabad, January 4-8 2008.
    • Proc. VLSI'08, Hyderabad, January 4-8 2008
    • Kang, D.-H.1
  • 5
    • 67349157165 scopus 로고    scopus 로고
    • Reliability impact of Chalcogenide-Structure relaxation in Phase-Change memory (PCM) Cells-Part II: Physics-Based modeling
    • S. Lavizzari, D. Ielmini, D. Sharma, and A. Lacaita, "Reliability impact of Chalcogenide-Structure relaxation in Phase-Change memory (PCM) Cells-Part II: Physics-Based modeling," Electron Devices, IEEE Transactions on, vol. 56, no. 5, pp. 1078-1085, 2009.
    • (2009) Electron Devices, IEEE Transactions on , vol.56 , Issue.5 , pp. 1078-1085
    • Lavizzari, S.1    Ielmini, D.2    Sharma, D.3    Lacaita, A.4
  • 8
    • 67349217820 scopus 로고    scopus 로고
    • Unified mechanisms for structural relaxation and crystallization in phase-change memory devices
    • D. Ielmini, M. Boniardi, A. L. Lacaita, A. Redaelli, and A. Pirovano, "Unified mechanisms for structural relaxation and crystallization in phase-change memory devices," Microelectronic Engineering, vol. 86, no. 7-9, pp. 1942-1945, 2009.
    • (2009) Microelectronic Engineering , vol.86 , Issue.7-9 , pp. 1942-1945
    • Ielmini, D.1    Boniardi, M.2    Lacaita, A.L.3    Redaelli, A.4    Pirovano, A.5
  • 10
    • 46649093142 scopus 로고    scopus 로고
    • A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization
    • Jul.
    • K. Sonoda et al., "A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization," IEEE Transactions on Electron Devices, vol. 55, no. 7, pp. 1672-11660, Jul. 2008.
    • (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.7 , pp. 1672-11660
    • Sonoda, K.1
  • 12
    • 0015376113 scopus 로고
    • Computation of channel capacity and rate-distortion functions
    • R. Blahut, "Computation of channel capacity and rate-distortion functions," IEEE transactions on Information Theory, vol. 18, no. 4, pp. 460-473, 1972.
    • (1972) IEEE Transactions on Information Theory , vol.18 , Issue.4 , pp. 460-473
    • Blahut, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.