Superposition coding in rewritable channels

2010 Information Theory and Applications Workshop, ITA 2010 - Conference Proceedings

Volumn , Issue , 2010, Pages 245-253

  Lastras Montano L A ^a   Mittelholzer, T ^b   Franceschini, M M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Zurich Research Laboratory   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE NUMBERS; CLOSED FORM; GAUSSIANS; GENERAL UPPER BOUND; REWRITABLE; SEQUENTIAL DECODING; SUPER-POSITION CODING;

ALGEBRA;

CHANNEL CAPACITY;

EID: 77952736047     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ITA.2010.5454114     Document Type: Conference Paper

References (14)

1. L.A. Lastras-Montaño; M.M. Franceschini; T. Mittelholzer; M. Sharma. Rewritable storage channels. In 2008 International Symposium on Information Theory and its Applications, pages 1-6, Dec 2008.
2. T. Mittelholzer, M. Franceschini, L.A. Lastras-Montaño, I. Elfadel, M. Sharma. Rewritable channels with data-dependent noise. In 2009 International Conference on Communications, pages 1-6, June 2009.
3. Franceschini, M.; Lastras-Montaño, L.A.; Mittelholzer, T.; Sharma, M. The role of feedback in rewritable storage channels [lecture notes]. IEEE Signal Processing Magazine, pages 190-194,222, November 2009.
4. T. Mittelholzer; L.A. Lastras-Montaño; M. Sharma; M. Franceschini. Rewritable storage channels with limited number of rewrite iterations. In Submitted to ISIT 2010, July 2010.
5. L.A. Lastras-Montaño; M. M. Franceschini, T. Mittelholzer. The capacity of the uniform noise rewritable channel with average cost. In Submitted to ISIT 2010, July 2010.
6. S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y. C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S. H. Chen, and H. L. Lung. Phasechange random access memory: A scalable technology. IBM Journal of Research and Development, 52:465-480, 2008.
7. G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, and R. Shenoy. Phase change memory technology. Journal of Vacuum Science & Technology B, 28(2), 2010. http://arxiv.org/abs/1001.1164.
8. B. Ricco M. Grossi, M. Lanzoni. Program schemes for multilevel flash memories. Proceedings of the IEEE, 91(4), April 2003.
9. T. Nirschl, J. B. Philipp, T. D. Happ, G. W. Burr, B. Rajendran, M. H. Lee, A. Schrott, M. Yang, M. Breitwisch, and C. F. Chen. Write strategies for 2 and 4-bit multi-level phase-change memory. IEEE International Electron Devices Meeting, 2007. IEDM 2007., pages 461-464, 2007.
10. F. Bedeschi, R. Fackenthal, C. Resta, E. M. Donze, M. Jagasivamani, E. Buda, F. Pellizzer, D. Chow, A. Cabrini, and G. M. A. Calvi. A multi-level-cell bipolar-selected phase-change memory. Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International, pages 428-625, 2008.
11. D.-H. Kang et al. Two-bit cell operation in diode-switch phase change memory cells with 90nm technology. In Proc. VLSI'08, Hyderabad, January 4-8 2008.
12. Thomas M. Cover and Joy A. Thomas. Elements of Information Theory. Wiley-Interscience, 1991.
13. P. Billingsley. Probability and Measure. John Wiley & Sons, Los Alamitos, CA, 1995.
14. M. Raginsky. On the information capacity of gaussian channels under small peak power constraints. In Proc. Forty-Sixth Annual Allerton Conference, pages 286-293, September 2008.