Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO2 current-blocking layer

Japanese Journal of Applied Physics

Volumn 48, Issue 8 Part 2, 2009, Pages

  Han, Won Suk ^a   Kim, Young Yi ^a   Kong, Bo Hyun ^a   Cho, Hyung Koun ^a   Moon, Jin Young ^b   Lee, Ho Seong ^b  

^a Sungkyunkwan University   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; CURRENT COMPONENT; EXTRACTION EFFICIENCIES; LIGHT-EXTRACTION EFFICIENCY; OUTPUT POWER; SERIES RESISTANCES; VERTICAL CURRENT; ZNO; ZNO FILMS; ZNO/P-SI;

GRAIN BOUNDARIES; GROUNDING ELECTRODES; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL RECOVERY; POLYCRYSTALS; PROFITABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; ZINC OXIDE;

EXTRACTION;

EID: 77952685473     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.08HK03     Document Type: Article

References (21)

1. H. Cao, J. Y. Wu, H. C. Ong, J. Y. Dai, and R. P. H. Chang: Appl. Phys. Lett. 73 (1998) 572.
2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332.
3. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell: Appl. Phys. Lett. 81 (2002) 1830.
4. S. Muthukumar, C. R. Gorla, N. W. Emanetoglu, S. Liang, and Y. Lu: J. Cryst. Growth 225 (2001) 197.
5. S. J. Martin, R. L. Gunshor, and R. F. Pierret: Appl. Phys. Lett. 37 (1980) 700.
6. A. Talbi, F. Sarry, L. L. Brizoual, O. Elmazria, and P. Alnot: IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51 (2004) 1421.
7. H. Kobayashi, H. Mori, T. Ishida, and Y. Nakato: J. Appl. Phys. 77 (1995) 1301.
8. J. Huang, H. Lu, Z. Ye, L. Wang, B. Zhao, and H. He: J. Appl. Phys. 102 (2007) 053521.
9. B. H. Kong, S. K. Mohanta, D. C. Kim, and H. K. Cho: Physica B 401-402 (2007) 399.
10. J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng: Appl. Phys. Lett. 88 (2006) 182112.
11. X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, Y. F. Mei, Ricky K. Y. Fu, G. G. Siu, and P. K. Chu: Appl. Phys. Lett. 88 (2006) 132104.
12. X. Li, B. Zhang, H. Zhu, X. Dong, X. Xia, Y. Cui, Y. Ma, and G. Du: J. Phys. D 41 (2008) 035101.
13. H. Kim, A. Cepler, M. S. Osofsky, R. C. Y. Auyeung, and A. Piqué: Appl. Phys. Lett. 90 (2007) 203508.
14. M. Dutta and D. Basak: Appl. Phys. Lett. 92 (2008) 212112.
15. A. P. Roth and D. F. Williams: J. Appl. Phys. 52 (1981) 6685.
16. C. C. Liu, Y. H. Chen, M. P. Houng, Y. H. Wang, Y. K. Su, W. B. Chen, and S. M. Chen: IEEE Photonics Technol. Lett. 16 (2004) 1444.
17. H. C. Wang, Y. K. Su, Y. H. Chung, C. L. Lin, W. B. Chen, and S. M. Chen: Solid-State Electron. 49 (2005) 37.
18. S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei, and Y. Z. Chiou: Electrochem. Solid-State Lett. 10 (2007) H175.
19. H. S. Kim, K. K. Kim, K. K. Choi, H. K. Kim, J. O. Song, J. H. Cho, K. H. Baik, C. S. Sone, Y. J. Park, and T. Y. Seong: Appl. Phys. Lett. 91 (2007) 023510.
20. D. C. Kim, W. S. Han, H. K. Cho, B. H. Kong, and H. S. Kim: Appl. Phys. Lett. 91 (2007) 231901.
21. D. K. Schroeder: Semiconductor Material and Device Characterization (Wiley, New York, 1998) 2nd ed., Chap. 4, pp. 185-192.