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Volumn 10, Issue 6, 2007, Pages 175-177

Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRODES; EPITAXIAL LAYERS; NITRIDES; RELIABILITY THEORY; SILICA;

EID: 34047269243     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2718392     Document Type: Article
Times cited : (33)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.