AlGaInP light emitting diode with a current-blocking structure

Solid-State Electronics

Volumn 49, Issue 1, 2005, Pages 37-41

  Wang, H C ^a   Su, Y K ^a   Chung, Y H ^a   Lin, C L ^a   Chen, W B ^a   Chen, S M ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

Author keywords

AlGaInP; Current blocking; Junction temperature; Light emitting diode

Indexed keywords

ELECTRIC CURRENTS; ENERGY UTILIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

ALGAINP; CURRENT-BLOCKING STRUCTURE; JUNCTION TEMPERATURE; LUMINOUS INTENSITY;

LIGHT EMITTING DIODES;

EID: 9544253912     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.07.014     Document Type: Article

References (7)

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