Structural evolution optimization at p/i interface and in the bulk intrinsic-layer for high efficiency microcrystalline silicon solar cells

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1089-1092

  Hou, Guofu ^a   Han, Xiaoyan ^a   Geng, Xinhua ^a   Zhang, Xiaodan ^a   Wei, Changchun ^a   Sun, Jian ^a   Chen, Xinliang ^a   Zhang, Jianjun ^a   Zhao, Ying ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH DIRECTIONS; GROWTH SURFACES; HIGH CONVERSION EFFICIENCY; HIGH EFFICIENCY; HIGH QUALITY; HIGH RATE; HYDROGENATED MICROCRYSTALLINE SILICON; I-LAYER; INCUBATION LAYER; POWER PROFILING; SEED LAYER; SILANE CONCENTRATIONS; SINGLE JUNCTION; STEP-BY-STEP; STRUCTURAL EVOLUTION; VERY HIGH FREQUENCY POWER;

CONVERSION EFFICIENCY; ION BOMBARDMENT; IONS; SEMICONDUCTOR GROWTH; SOLAR CELLS; STRUCTURAL OPTIMIZATION;

MICROCRYSTALLINE SILICON;

EID: 77952558243     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982709     Document Type: Conference Paper

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