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Volumn B, Issue , 2003, Pages 1776-1779

A critical role of p/i interface in nanocrystalline single junction p-i-n solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE FRACTION; GROWTH SURFACE REACTIONS; INCUBATION PHASE; P/I INTERFACES;

EID: 6344243486     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (12)
  • 3
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    • Formation of interface defects by enhanced impurity diffusion in microcrystalline silicon solar cells
    • Y. Nasuno, M. Kondo, A. Matsuda, H. Fukuhori, and Y. Kanemitsu, "Formation of interface defects by enhanced impurity diffusion in microcrystalline silicon solar cells", Appl. Phys. Lett. 81, 3155 (2002).
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 3155
    • Nasuno, Y.1    Kondo, M.2    Matsuda, A.3    Fukuhori, H.4    Kanemitsu, Y.5
  • 4
    • 0001614737 scopus 로고    scopus 로고
    • Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition
    • M. Kondo, Y. Toyoshima, A. Matsuda, and K. Ikuta, "Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition", J. Appl. Phys. 80, 6061 (1996).
    • (1996) J. Appl. Phys. , vol.80 , pp. 6061
    • Kondo, M.1    Toyoshima, Y.2    Matsuda, A.3    Ikuta, K.4
  • 5
    • 0028274463 scopus 로고
    • Structure of polycrystalline silicon thin film fabricated from fluorinated precursors by layer-by-layer technique
    • S. Ishihara, D. He, and I. Shimizu, "Structure of polycrystalline silicon thin film fabricated from fluorinated precursors by layer-by-layer technique", Jpn. J. Appl. Phys., Part 1, 33, 51 (1994).
    • (1994) Jpn. J. Appl. Phys., Part 1 , vol.33 , pp. 51
    • Ishihara, S.1    He, D.2    Shimizu, I.3
  • 6
    • 0026867274 scopus 로고
    • Bond selectivity in silicon film growth
    • J. J. Boland, and G. N. Parsons, "Bond selectivity in silicon film growth", Science 256, 1304 (1992).
    • (1992) Science , vol.256 , pp. 1304
    • Boland, J.J.1    Parsons, G.N.2
  • 7
    • 0001904230 scopus 로고    scopus 로고
    • Growth of amorphous-layer-free macrocrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition
    • J. H. Zhou, K. Ikuta, T. Yasuda, T. Umeda, S. Yamasaki, and K. Tanaka, "Growth of amorphous-layer-free macrocrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition", Appl. Phys. Lett. 71, 1534 (1997).
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 1534
    • Zhou, J.H.1    Ikuta, K.2    Yasuda, T.3    Umeda, T.4    Yamasaki, S.5    Tanaka, K.6
  • 8
    • 0032673621 scopus 로고    scopus 로고
    • High deposition rate amorphous silicon solar cells and thin film transistors using the pulsed plasma PECVD technique
    • S. Morrison, J. Xi, and A. Madan, "High deposition rate amorphous silicon solar cells and thin film transistors using the pulsed plasma PECVD technique", Mat. Res. Soc. Symp. Proc. 507, p. 559 (1998).
    • (1998) Mat. Res. Soc. Symp. Proc. , vol.507 , pp. 559
    • Morrison, S.1    Xi, J.2    Madan, A.3
  • 12
    • 6344278561 scopus 로고    scopus 로고
    • Modified pulsed PECVD technique for nano-crystalline silicon solar cells: An effect of i-layer growth temperature
    • U. K. Das, E. Centurioni, S. Morrison, D. L. Williamson, and A. Madan, "Modified pulsed PECVD technique for nano-crystalline silicon solar cells: an effect of i-layer growth temperature", presented in this conference (2003).
    • (2003) Presented in This Conference
    • Das, U.K.1    Centurioni, E.2    Morrison, S.3    Williamson, D.L.4    Madan, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.