Laser-induced dielectric breakdown in tetramethylgermane/tetramethyltin mixtures: Deposition of nanostructured Sn/Ge/C and Ge-Sn/C films

Applied Organometallic Chemistry

Volumn 24, Issue 6, 2010, Pages 458-463

  Křenek, Tomáš ^a,b   Murafa, Nataliya ^c   Bezdička, Petr ^c   Šubrt, Jan ^c   Pola, Josef ^a  

^a INSTITUTE OF CHEMICAL PROCESS FUNDAMENTALS   (Czech Republic)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^c INSTITUTE OF INORGANIC CHEMISTRY   (Czech Republic)

Author keywords

Dielectric breakdown; Ge Sn C nanostructures; IR laser; Tetramethylgermane; Tetramethyltin

Indexed keywords

DIELECTRIC BREAKDOWN; DIELECTRIC BREAKDOWNS; IR LASERS; TETRAMETHYLGERMANE; TETRAMETHYLTIN;

AMORPHOUS CARBON; ELECTRIC BREAKDOWN; GERMANIUM; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TIN; X RAY DIFFRACTION;

NANOSTRUCTURES;

EID: 77952500073     PISSN: 02682605     EISSN: 10990739     Source Type: Journal    
DOI: 10.1002/aoc.1640     Document Type: Article

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