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Volumn 744, Issue , 2002, Pages 49-54

New Ge-Sn materials with adjustable bandgaps and lattice constants

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ENERGY GAP; HYDRIDES; LATTICE CONSTANTS; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0038488647     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-744-m2.5     Document Type: Conference Paper
Times cited : (3)

References (11)
  • 8
    • 0000589965 scopus 로고
    • Resonant raman scattering in semiconductors
    • Hohler, G. Ed. Springer-Verlag: New York
    • W. Richter, "Resonant Raman Scattering in Semiconductors", in Springer Tracts in Modern Physics, Hohler, G. Ed. Springer-Verlag: New York, Vol. 78, p 121 (1976).
    • (1976) Springer Tracts in Modern Physics , vol.78 , pp. 121
    • Richter, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.