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Volumn 744, Issue , 2002, Pages 49-54
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New Ge-Sn materials with adjustable bandgaps and lattice constants
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL STRUCTURE;
ENERGY GAP;
HYDRIDES;
LATTICE CONSTANTS;
OPTICAL PROPERTIES;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON;
SYNTHESIS (CHEMICAL);
THERMODYNAMIC STABILITY;
TRANSMISSION ELECTRON MICROSCOPY;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
INFRARED SEMICONDUCTOR;
LOW-ENERGY SECONDARY ION MASS SPECTROMETRY;
ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION;
GERMANIUM ALLOYS;
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EID: 0038488647
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-744-m2.5 Document Type: Conference Paper |
Times cited : (3)
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References (11)
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