Raman scattering from fully strained Ge1-xSnx (x≤0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy

Journal of Applied Physics

Volumn 84, Issue 4, 1998, Pages 2219-2223

  Rojas Lopez M ^a   Navarro Contreras, H ^a   Desjardins, P ^b   Gurdal, O ^b   Taylor, N ^b   Carlsson, J R A ^b   Greene, J E ^b  

^a UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013411987     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368286     Document Type: Article

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