Electrical and optical properties of carbon-tin films plasma-deposited from tetramethyltin in a three-electrode reactor

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 534-538

  Tyczkowski, J ^a   Pietrzyk, B ^a   Hatanaka, Y ^b   Nakanishi, Y ^b  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Amorphous insulator amorphous semiconductor transition; Electrical properties; Hydrogenated carbon tin films; Optical properties; Plasma deposition

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; PHASE TRANSITIONS;

AMORPHOUS INSULATOR AMORPHOUS SEMICONDUCTOR TRANSITION; HYDROGENATED CARBON TIN FILMS; PLASMA DEPOSITION;

THIN FILMS;

EID: 0031547253     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00943-9     Document Type: Article

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