Physical model for current-voltage characteristics of thin-film transistors

Japanese Journal of Applied Physics

Volumn 48, Issue 3 PART 3, 2009, Pages

  Kimura, Mutsumi ^a,b  

^a RYUKOKU UNIVERSITY   (Japan)

^b Thin Film Materials and Devices Meeting ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CHANNEL REGION; GATE VOLTAGES; INTERFACE TRAP DENSITY; IV CHARACTERISTICS; PHYSICAL MODEL; SUBTHRESHOLD;

SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77952490599     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.03B008     Document Type: Article

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