Evaluation of thin-film photodiodes and development of thin-film phototransistor

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 2, 2008, Pages 1924-1929

  Yamashita, Takehiko ^a   Shima, Takehiro ^a   Nishizaki, Yoshitaka ^a   Kimura, Mutsumi ^a   Kara, Hiroyuki ^b   Inoue, Satoshi ^b  

^a RYUKOKU UNIVERSITY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Artificial retina; Depletion layer; Electric field; Photodiode; Photosensor; Phototransistor; Thin film

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL PROPERTIES; PHOTODIODES; PHOTOSENSITIVITY; PHOTOTRANSISTORS;

ARTIFICIAL RETINA; DEPLETION LAYER; ELECTRIC FIELD; PHOTOSENSOR; THIN-FILM;

THIN FILM DEVICES;

EID: 54249128319     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1924     Document Type: Article

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