Present status and future direction of BSIM SOI model for high-performance/low-power/RF application

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Volumn , Issue , 2002, Pages 690-693

  Fung, Samuel K H ^a,b   Su, Pin ^b   Hu, Chenming ^b  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Compact model; Fully depleted; History effect; Partially depleted; SOI

Indexed keywords

COMPACT MODELS; FULLY DEPLETED; HISTORY EFFECT; PARTIALLY DEPLETED; SOI;

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; INDUCTANCE; MATHEMATICAL MODELS; MICROPROCESSOR CHIPS; ULTRATHIN FILMS;

GATES (TRANSISTOR);

EID: 6344243663     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. T. Bucholtz, et al., ISSCC, 2000.
2. N. Zamdmer, et al., VLSI Tech. Symp., 2001.
3. S.K.H.Fung, et al., IEDM 2001.
4. S.K.H.Fung, et al., IEDM 2000.
5. P. Su, S.K.H.Fung, et al., CICC, 2000.
6. http://www-device.eecs.berkelev.edu/~bsimsoi
7. D. Sinitsky, S.K.H.Fung, et al., VLSI 1998.