Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surface

Semiconductor Science and Technology

Volumn 25, Issue 6, 2010, Pages

  Huang, H W ^a   Lai, F I ^c   Huang, J K ^a   Lin, C H ^b   Lee, K Y ^b   Lin, C F ^d   Yu, C C ^b   Kuo, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Luxtaltek Corporation   (Taiwan)

^c YUAN ZE UNIVERSITY   (Taiwan)

^d NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD VOLTAGE; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; LIGHT OUTPUT POWER; METAL CONTACTS; NANO SCALE; NANOSCALE STRUCTURE; P-TYPE;

GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON COMPOUNDS; TIN; TITANIUM COMPOUNDS;

GALLIUM ALLOYS;

EID: 77952393543     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/6/065007     Document Type: Article

References (12)

1. Mukai T, Yamada M and Nakamura S 1999 Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes Japan. J. Appl. Phys. 38 3976
2. Koike M, Shibata N, Kato H and Takahashi Y 2002 Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications IEEE J. Sel. Top. Quantum Electron. 8 271
3. Schubert E F 2003 Light-Emitting Diodes (Cambridge: Cambridge University Press) pp 277-319
4. Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P and Nakamura S 2004 Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening Appl. Phys. Lett. 84 855
5. Huang H W, Chu J T, Kao C C, Hsueh T H, Yu C C, Kuo H C and Wang S C 2005 Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface Nanotechnology 16 1844
6. 2 photonic crystal on an ITO film by holographic lithography Phys. Status Solidi (c) 5 2152
7. Huang H W, Kuo H C, Chu J T, Lai C F, Kao C C, Lu T C, Wang S C, Tsai R J, Yu C C and Lin C F 2006 Nitride-based LEDs with nano-scale textured sidewalls using natural lithography Nanotechnology 17 2998
8. Lee Y J, Kuo H C, Lu T C and Wang S C 2006 High light-extraction GaN-based vertical LEDs with double diffuse surfaces J. Quantum Electron. 42 1196
9. Huh C, Lee J M, Kim D J and Park S J 2002 Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer J. Appl. Phys. 92 2248
10. Nishida T, Kobayashi N and Ban T 2003 GaN-free transparent ultraviolet light-emitting diodes Appl. Phys. Lett. 82 1
11. Lee Y B, Takaki R, Sato H, Naoi Y and Sakai S 2003 High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface Phys. Status Solidi (a) 200 87
12. Wang H C, Su Y K, Lin C L, Chen W B and Chen S M 2004 InGaN/GaN light-emitting diodes with a lateral current blocking structure Japan. J. Appl. Phys. 43 2006