SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 17, 2010, Pages

High integrity metal/organic device interfaces via low temperature buffer layer assisted metal atom nucleation

(6) Maitani, Masato M a Allara, David L a Ohlberg, Douglas A A b Li, Zhiyong b Williams, R Stanley b Stewart, Duncan R c

a PENNSYLVANIA STATE UNIVERSITY (United States)

b HEWLETT PACKARD LABORATORIES (United States)

c NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION METHODS; DEVICE INTERFACES; FILM INTERFACES; LOW TEMPERATURE BUFFER LAYERS; METAL ATOMS; METAL CONTACTS; METAL FILAMENTS; MOLECULAR ELECTRONIC DEVICE; MOLECULAR ORGANIZATION; PERMEABLE FILMS; TOPOGRAPHIC IMAGING;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; GOLD; GOLD COATINGS; METALS; MOLECULAR ELECTRONICS; QUALITY ASSURANCE; XENON;

ATOMS;

EID: 77952382179 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3377044 Document Type: Article

Times cited : (16)

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- See supplementary material at http://dx.doi.org/10.1063/1.3377044 E-APPLAB-96-091013 for AFM and TEM images of low coverage Au deposition samples.

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